| PART |
Description |
Maker |
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| MMJT9410T1 MMJT9410-D |
NPN Bipolar Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
| BUV11 BUV11.MOD |
20 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| 2N6536 2N6536.MOD |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
| BC440-6 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
